Photocurrent spectroscopy applied to thin film solar cells based on hydrogenated amorphous silicon (a-Si:H)
DOI:
https://doi.org/10.21754/tecnia.v15i2.419Keywords:
thin films, amorphous silicon, photocurrent measurements, solar cellsAbstract
Using photocurrent spectroscopy, we report measurements of the photo responde below the optical gap in hydrogenated amorphous silicon (a-Si:H). The a-Si:H films were grown in a non conventional DC plasma assited discharge chamber. The measurements suggest that the density of states of this material is not very different than conventional intrinsic a-Si:H (device-quality) and not so extended as usually taken. The positions of the corresponding photovoltaic transition energies are determined and agree very well with known data obtained by other methods.
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[1] Schreiber, R.,"Barriereenhoehen verschiedener Metalle auf amorphem Silizium un amorphen Silizium-Mischhalbleiter uns Sub-Gap-Absorptionsmessungen an Schottky Strukturen", Diplomarbeit, IPE Universitaet Stuttgart 1986.
[2] Heck, S., "Untersuchung von lichtinduzierte Defekte des hydrogenisiertem amorphen Siliziums", Dissertation, Uni. Marburg 2002.
[3] Mensing, G., et al. "Defect transition energies and the density of electronic states in hydrogenated amorphous silicon", J. Non- Cyst. Solids pp. 299-302, (2002) pp. 621-625.
[4] Ed. By J.I. "Pankove Semiconductors and semimetals" (Academic, New York, 1984).Vol. 21
[5] W.B. Jackson, N.M. Amer., "Phys. Rev. B" 25, 5559 (1982).
[6] Amato, G., et al. "J. Appl. Phys", pp.71, 3479 (1992).
[7] Platz, R., et al, "J. Non-Cyst. Solids", pp. 164-166, 355, (1993).
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