Photocurrent spectroscopy applied to thin film solar cells based on hydrogenated amorphous silicon (a-Si:H)

Authors

  • Aníbal Valera Palacios Facultad de Ciencias, Universidad Nacional de Ingeniería. Lima, Perú.
  • Marco Valentin Siu Facultad de Ciencias, Universidad Nacional de Ingeniería. Lima, Perú.

DOI:

https://doi.org/10.21754/tecnia.v15i2.419

Keywords:

thin films, amorphous silicon, photocurrent measurements, solar cells

Abstract

Using photocurrent spectroscopy, we report measurements of the photo responde below the optical gap in hydrogenated amorphous silicon (a-Si:H). The a-Si:H films were grown in a non conventional DC plasma assited discharge chamber. The measurements suggest that the density of states of this material is not very different than conventional intrinsic a-Si:H (device-quality) and not so extended as usually taken. The positions of the corresponding photovoltaic transition energies are determined and agree very well with known data obtained by other methods.

Downloads

Download data is not yet available.

References

[1] Schreiber, R.,"Barriereenhoehen verschiedener Metalle auf amorphem Silizium un amorphen Silizium-Mischhalbleiter uns Sub-Gap-Absorptionsmessungen an Schottky Strukturen", Diplomarbeit, IPE Universitaet Stuttgart 1986.

[2] Heck, S., "Untersuchung von lichtinduzierte Defekte des hydrogenisiertem amorphen Siliziums", Dissertation, Uni. Marburg 2002.

[3] Mensing, G., et al. "Defect transition energies and the density of electronic states in hydrogenated amorphous silicon", J. Non- Cyst. Solids pp. 299-302, (2002) pp. 621-625.

[4] Ed. By J.I. "Pankove Semiconductors and semimetals" (Academic, New York, 1984).Vol. 21

[5] W.B. Jackson, N.M. Amer., "Phys. Rev. B" 25, 5559 (1982).

[6] Amato, G., et al. "J. Appl. Phys", pp.71, 3479 (1992).

[7] Platz, R., et al, "J. Non-Cyst. Solids", pp. 164-166, 355, (1993).

Published

2005-12-01

How to Cite

[1]
A. Valera Palacios and M. Valentin Siu, “Photocurrent spectroscopy applied to thin film solar cells based on hydrogenated amorphous silicon (a-Si:H)”, TEC, vol. 15, no. 2, pp. 5–11, Dec. 2005.

Issue

Section

Articles

Most read articles by the same author(s)